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Proceedings Paper

Investigation of the performance of state-of-the-art defect inspection tools within EUV lithography
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Paper Abstract

Optical bright field wafer inspection followed by repeater analysis is used to find a maximum number of programmed and natural defects on a EUV patterned mask. Each aspect of the inspection methodology affecting the sensitivity of the wafer inspection is optimized individually. A special focus is given to the wafer stack. Simulation is used to predict the optimum stack properties and experimental verification is performed through exposures on the IMEC EUV Alpha Demo Tool. The final result is benchmarked against state-of-the-art patterned mask inspection and blank inspection to evaluate the capabilities and limitations of the optical wafer inspection. In addition, the locations obtained by each inspection technique (wafer and mask) were reviewed on wafer by means of a new automated methodology that is based on a tight stage accuracy of both inspection tool and review SEM.

Paper Details

Date Published: 3 April 2012
PDF: 13 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83240L (3 April 2012); doi: 10.1117/12.916979
Show Author Affiliations
Dieter Van den Heuvel, IMEC (Belgium)
Rik Jonckheere, IMEC (Belgium)
Bart Baudemprez, IMEC (Belgium)
Shaunee Cheng, IMEC (Belgium)
Gino Marcuccilli, KLA-Tencor (United States)
Andrew Cross, KLA-Tencor (United States)
Gregg Inderhees, KLA-Tencor (United States)
Paolo Parisi, KLA-Tencor (United States)


Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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