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Proceedings Paper

Finite element models of lithographic mask topography
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Paper Abstract

Photolithography simulations are widely used to predict, to analyze and to design imaging processes in scanners used for IC manufacture. The success of these efforts is strongly dependent on their ability to accurately capture the key drivers responsible for the image formation. Much effort has been devoted to understanding the impacts of illuminator and projection lens models on the accuracy of the lithography simulations [1-3]. However, of equal significance is the role of the mask models and their interactions with the illuminator models.

Paper Details

Date Published: 13 March 2012
PDF: 14 pages
Proc. SPIE 8326, Optical Microlithography XXV, 83261B (13 March 2012); doi: 10.1117/12.916957
Show Author Affiliations
Jacek K. Tyminski, Nikon Precision Inc. (United States)
Raluca Popescu, Nikon Precision Inc. (United States)
Sven Burger, JCMwave GmbH (Germany)
Jan Pomplun, JCMwave GmbH (Germany)
Lin Zschiedrich, JCMwave GmbH (Germany)
Tomoyuki Matsuyama, Nikon Corp. (Japan)
Tomoya Noda, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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