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Proceedings Paper

Modeling the ion beam target interaction to reduce defects generated by ion beam deposition
Author(s): Thomas Cardinal; Daniel Andruczyk; He Yu; Vibhu Jindal; Patrick Kearney; David N. Ruzic
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Paper Abstract

The defectivity of extreme ultraviolet (EUV) mask blanks is a critical issue in EUV lithography. It has been observed that target surfaces can develop many formations that generate defects during ion beam sputtering. Two simulation models were developed to study the surface morphology and evolution of a target surface under different ion beam conditions. Extensive simulations were performed to understand the interaction of the ion beam with the target surface. The modeling was able to mimic the growth and the elimination of these formations through normal incidence bombardment as verified by ion beam sputtering experiments.

Paper Details

Date Published: 23 March 2012
PDF: 6 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222Q (23 March 2012); doi: 10.1117/12.916878
Show Author Affiliations
Thomas Cardinal, SEMATECH North (United States)
Daniel Andruczyk, Univ. of Illinois at Urbana-Champaign (United States)
He Yu, Univ. of Illinois at Urbana-Champaign (United States)
Univ. of Electronic Science and Technology of China (China)
Vibhu Jindal, SEMATECH North (United States)
Patrick Kearney, SEMATECH North (United States)
David N. Ruzic, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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