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Proceedings Paper

Conductive layer for charge dissipation during electron-beam exposures
Author(s): Luisa D. Bozano; Ratnam Sooriyakumaran; Linda K. Sundberg; Martha I. Sanchez; Elizabeth M. Lofano; Charles T. Rettner; Takayuki Nagasawa; Satoshi Watanabe; Yoshio Kawai; Nagarajan Palavesam; Gustavo Gandara Montano
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Paper Abstract

Electron beam resists develop a surface potential during exposure, which can lead to image placement errors of up to several nanometers [1] and result in poor CD uniformity and image quality. To address this problem, we have synthesized a conductive polymer that can be coated onto a resist. Our conductive discharge layer (CDL) is water-soluble and is easily removed during subsequent processing steps. Having established that our material has a low enough resistance for full charge dissipation, we have carried out extensive tests to evaluate the impact of the layer on lithographic performance. We will report these findings, which include measurements of the effect of the CDL on the resolution, roughness, and speed of the resist.

Paper Details

Date Published: 20 March 2012
PDF: 8 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250X (20 March 2012); doi: 10.1117/12.916756
Show Author Affiliations
Luisa D. Bozano, IBM Almaden Research Ctr. (United States)
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Linda K. Sundberg, IBM Almaden Research Ctr. (United States)
Martha I. Sanchez, IBM Almaden Research Ctr. (United States)
Elizabeth M. Lofano, IBM Almaden Research Ctr. (United States)
Charles T. Rettner, IBM Almaden Research Ctr. (United States)
Takayuki Nagasawa, Shin-Etsu Chemical Co., Ltd. (Japan)
Satoshi Watanabe, Shin-Etsu Chemical Co., Ltd. (Japan)
Yoshio Kawai, Shin-Etsu Chemical Co., Ltd. (Japan)
Nagarajan Palavesam, Politecnico di Torino (Italy)
Gustavo Gandara Montano, Northern Arizona Univ. (United States)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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