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Proceedings Paper

Evolution of negative tone development photoresists for ArF lithography
Author(s): Michael Reilly; Cecily Andes; Thomas Cardolaccia; Young Seok Kim; Jong Keun Park
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Paper Abstract

The negative tone development process enables the printing of dark field features on wafer using bright field masks with a manufacturing capability for back-end-of-line processing. The performance of NTD photoresist has advanced along two fronts: namely common process window for dense and semi-dense contacts and the resolution and line width roughness of isolated trenches. Furthermore, the chemistry has evolved by the convergence of capability for printing line/space and contact hole using a single photoresist formulation. The process performance of a series of NTD photoresist is reported. Particular focus is placed on process latitude, CDU, thickness control, LWR and resolution limit.

Paper Details

Date Published: 20 March 2012
PDF: 9 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832507 (20 March 2012); doi: 10.1117/12.916633
Show Author Affiliations
Michael Reilly, The Dow Chemical Co. (United States)
Cecily Andes, The Dow Chemical Co. (United States)
Thomas Cardolaccia, The Dow Chemical Co. (United States)
Young Seok Kim, The Dow Chemical Co. (United States)
Jong Keun Park, The Dow Chemical Co. (United States)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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