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Proceedings Paper

CDU prediction based on in-situ image measurements
Author(s): A. Bourov; J. R. Cheng; L. Duan; J. Yang; J. Min
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Paper Abstract

Control of CD uniformity is a key aspect of IC manufacturing. Ability to accurately predict wafer-measured CD prior to exposure is critical to CDU control. In this paper we present a method to calculate a predicted CD value based on in-situ measurements, and estimate CD uniformity across the field of an exposure tool. This method is based on direct measurements of aerial image using a sensor built into the wafer stage of SMEE SSA600-series exposure scanners. Using this sensor to measure image of several features at 9 points across the exposure field, we compare predicted CD and ADI CD obtained using a standard wafer process and CD-SEM.

Paper Details

Date Published: 13 March 2012
PDF: 5 pages
Proc. SPIE 8326, Optical Microlithography XXV, 83261T (13 March 2012); doi: 10.1117/12.916629
Show Author Affiliations
A. Bourov, Shanghai Microelectronics Equipment Co. (China)
J. R. Cheng, Shanghai Microelectronics Equipment Co. (China)
L. Duan, Shanghai Microelectronics Equipment Co. (China)
J. Yang, Shanghai Microelectronics Equipment Co. (China)
J. Min, Shanghai Microelectronics Equipment Co. (China)

Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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