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Proceedings Paper

Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning
Author(s): Thomas Peschel; Gerhard Kalkowski; Ramona Eberhardt
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Paper Abstract

We report on Finite Element Modeling (FEM) of the influence of heat load due to the lithographic exposure on the inplane distortion (IPD) of 450 mm Si-wafers and hence on the effect of the heat load on the achievable image placement accuracy. Based on a scenario of electron beam writing at an exposure power of 20 mW, the thermo-mechanical behavior of the chuck and the attached Si wafer is modeled and used to derive corresponding IPD values. To account for the pin structured chuck surface, an effective layer model is derived. Different materials for the wafer chuck are compared with respect to their influence on wafer IPD and thermal characteristics of the exposure process. Guidelines for the selection of the chuck material und suggestions for its cooling and corrective strategies on e-beam steering during exposure are derived.

Paper Details

Date Published: 21 March 2012
PDF: 8 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230J (21 March 2012); doi: 10.1117/12.916616
Show Author Affiliations
Thomas Peschel, Fraunhofer Institut für Angewandte Optik und Feinmechanik (Germany)
Gerhard Kalkowski, Fraunhofer Institut für Angewandte Optik und Feinmechanik (Germany)
Ramona Eberhardt, Fraunhofer Institut für Angewandte Optik und Feinmechanik (Germany)

Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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