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Proceedings Paper

50 keV electron multibeam mask writer for the 11nm HP node: first results of the proof of concept tool (eMET POC)
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Paper Abstract

First results obtained with IMS Nanofabrication's 50keV proof-of-concept electron multi-beam mask exposure tool (eMET POC) are presented. The eMET POC was designed from scratch to meet the requirements of the 11nm half-pitch node and features already the same column as future high volume manufacturing (HVM) tools. All exposures shown in this paper were the result of 262,144 beams of 20nm beam size working in parallel demonstrating the capability of IMS' multi-beam technology. An Alpha Tool is scheduled for 2014, followed by a Beta Tool in 2015 and 1st generation HVM Tools in 2016.

Paper Details

Date Published: 21 March 2012
PDF: 8 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230G (21 March 2012); doi: 10.1117/12.916613
Show Author Affiliations
Christof Klein, IMS Nanofabrication AG (Austria)
Hans Loeschner, IMS Nanofabrication AG (Austria)
Elmar Platzgummer, IMS Nanofabrication AG (Austria)

Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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