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Proceedings Paper

Laser produced plasma EUV sources for device development and HVM
Author(s): David C. Brandt; Igor V. Fomenkov; Michael J. Lercel; Bruno M. La Fontaine; David W. Myers; Daniel J. Brown; Alex I. Ershov; Richard L. Sandstrom; Alexander N. Bykanov; Georgiy O. Vaschenko; Norbert R. Böwering; Palash Das; Vladimir B. Fleurov; Kevin Zhang; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Silvia De Dea; Wayne J. Dunstan; Peter Baumgart; Toshi Ishihara; Rod D. Simmons; Robert N. Jacques; Robert A. Bergstedt; Peter I. Porshnev; Christian J. Wittak; Michael R. Woolston; Robert J. Rafac; Jonathan Grava; Alexander A. Schafgans; Yezheng Tao
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Paper Abstract

Laser produced plasma (LPP) systems have been developed as the primary approach for the EUV scanner light source for optical imaging of circuit features at sub-22nm and beyond nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. We present the latest results on exposure power generation, collection, and clean transmission of EUV through the intermediate focus. Semiconductor industry standards for reliability and source availability data are provided. We report on measurements taken using a 5sr normal incidence collector on a production system. The lifetime of the collector mirror is a critical parameter in the development of extreme ultra-violet LPP lithography sources. Deposition of target material as well as sputtering or implantation of incident particles can reduce the reflectivity of the mirror coating during exposure. Debris mitigation techniques are used to inhibit damage from occuring, the protection results of these techniques will be shown over multi-100's of hours.

Paper Details

Date Published: 23 March 2012
PDF: 9 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221I (23 March 2012); doi: 10.1117/12.916521
Show Author Affiliations
David C. Brandt, Cymer, Inc. (United States)
Igor V. Fomenkov, Cymer, Inc. (United States)
Michael J. Lercel, Cymer, Inc. (United States)
Bruno M. La Fontaine, Cymer, Inc. (United States)
David W. Myers, Cymer, Inc. (United States)
Daniel J. Brown, Cymer, Inc. (United States)
Alex I. Ershov, Cymer, Inc. (United States)
Richard L. Sandstrom, Cymer, Inc. (United States)
Alexander N. Bykanov, Cymer, Inc. (United States)
Georgiy O. Vaschenko, Cymer, Inc. (United States)
Norbert R. Böwering, Cymer, Inc. (United States)
Palash Das, Cymer, Inc. (United States)
Vladimir B. Fleurov, Cymer, Inc. (United States)
Kevin Zhang, Cymer, Inc. (United States)
Shailendra N. Srivastava, Cymer, Inc. (United States)
Imtiaz Ahmad, Cymer, Inc. (United States)
Chirag Rajyaguru, Cymer, Inc. (United States)
Silvia De Dea, Cymer, Inc. (United States)
Wayne J. Dunstan, Cymer, Inc. (United States)
Peter Baumgart, Cymer, Inc. (United States)
Toshi Ishihara, Cymer, Inc. (United States)
Rod D. Simmons, Cymer, Inc. (United States)
Robert N. Jacques, Cymer, Inc. (United States)
Robert A. Bergstedt, Cymer, Inc. (United States)
Peter I. Porshnev, Cymer, Inc. (United States)
Christian J. Wittak, Cymer, Inc. (United States)
Michael R. Woolston, Cymer, Inc. (United States)
Robert J. Rafac, Cymer, Inc. (United States)
Jonathan Grava, Cymer, Inc. (United States)
Alexander A. Schafgans, Cymer, Inc. (United States)
Yezheng Tao, Cymer, Inc. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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