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Proceedings Paper

High sensitivity chemically amplified EUV resists through enhanced EUV absorption
Author(s): Owendi Ongayi; Matthew Christianson; Matthew Meyer; Suzanne Coley; David Valeri; Amy Kwok; Mike Wagner; Jim Cameron; Jim Thackeray
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Paper Abstract

Resolution, line edge roughness, sensitivity and low outgassing are the key focus points for extreme ultraviolet (EUV) resist materials. Sensitivity has become increasingly important so as to address throughput concerns in device manufacturing and compensate for the low power of EUV sources. Recent studies have shown that increasing the polymer linear absorption absorption coefficient in EUV resists translates to higher acid generation efficiency and good pattern formation. In this study, novel high absorbing polymer platforms are evaluated. The contributing effect of the novel absorbing chromophore to the resultant chemically amplified photoresist is evaluated and compared with a standard methacrylate PAG Bound Polymer (PBP) platform. We report that by increasing EUV absorption, we cleanly resolved 17 nm 1:1 line space can be achieved at a sensitivity of 14.5 mJ/cm2, which is consistent with dose requirements dictated by the ITRS roadmap. We also probe the effect of fluorinated small molecule additives on acid yield generation (Dil C) at EUV of a PBP platform.

Paper Details

Date Published: 22 March 2012
PDF: 12 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220T (22 March 2012); doi: 10.1117/12.916482
Show Author Affiliations
Owendi Ongayi, Dow Electronic Materials (United States)
Matthew Christianson, The Dow Chemical Co. (United States)
Matthew Meyer, The Dow Chemical Co. (United States)
Suzanne Coley, Dow Electronic Materials (United States)
David Valeri, Dow Electronic Materials (United States)
Amy Kwok, Dow Electronic Materials (United States)
Mike Wagner, The Dow Chemical Co. (United States)
Jim Cameron, Dow Electronic Materials (United States)
Jim Thackeray, Dow Electronic Materials (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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