Share Email Print
cover

Proceedings Paper

Patterning of CMOS device structures for 40-80nm pitches and beyond
Author(s): S. U. Engelmann; R. Martin; R. L. Bruce; H. Miyazoe; N. C. M. Fuller; W. S. Graham; E. M. Sikorski; M. Glodde; M. Brink; H. Tsai; J. Bucchignano; D. Klaus; E. Kratschmer; M. A. Guillorn
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

CMOS device patterning for aggressively scaled pitches (smaller than 80nm pitch) faces many challenges. Maybe one of the most crucial issues during device formation is the pattern transfer from a soft mask (carbon based) material into a hard mask material. A very characteristic phenomenon is that mechanical failure of the soft material may be observed. While this was observed first for patterning below 80nm pitch, it becomes increasingly important for even smaller pitches (≤ 40 nm). Further process optimization by various pre- and post-treatments has enabled robust pattern transfer down to 40nm pitch. A systematic study of the parameters impacting this phenomenon will be shown. Other challenges for patterning devices include profile control and material loss during gate stack patterning and spacer formation. Lastly, initial patterning experiments at an even more aggressive pitch show that the mechanical failure previously observed for larger pitches once again becomes an increasingly important issue to consider.

Paper Details

Date Published: 16 March 2012
PDF: 12 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280B (16 March 2012); doi: 10.1117/12.916447
Show Author Affiliations
S. U. Engelmann, IBM Thomas J. Watson Research Ctr. (United States)
R. Martin, IBM Thomas J. Watson Research Ctr. (United States)
R. L. Bruce, IBM Thomas J. Watson Research Ctr. (United States)
H. Miyazoe, IBM Thomas J. Watson Research Ctr. (United States)
N. C. M. Fuller, IBM Thomas J. Watson Research Ctr. (United States)
W. S. Graham, IBM Thomas J. Watson Research Ctr. (United States)
E. M. Sikorski, IBM Thomas J. Watson Research Ctr. (United States)
M. Glodde, IBM Thomas J. Watson Research Ctr. (United States)
M. Brink, IBM Thomas J. Watson Research Ctr. (United States)
H. Tsai, IBM Thomas J. Watson Research Ctr. (United States)
J. Bucchignano, IBM Thomas J. Watson Research Ctr. (United States)
D. Klaus, IBM Thomas J. Watson Research Ctr. (United States)
E. Kratschmer, IBM Thomas J. Watson Research Ctr. (United States)
M. A. Guillorn, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

© SPIE. Terms of Use
Back to Top