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Proceedings Paper

In-situ Sn contamination removal by hydrogen plasma
Author(s): J. Sporre; D. Elg; D. Andruczyk; T. Cho; D. N. Ruzic; S. Srivastava; D. C. Brandt
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Paper Abstract

One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.

Paper Details

Date Published: 23 March 2012
PDF: 11 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222L (23 March 2012); doi: 10.1117/12.916434
Show Author Affiliations
J. Sporre, Univ. of Illinois at Urbana-Champaign (United States)
D. Elg, Univ. of Illinois at Urbana-Champaign (United States)
D. Andruczyk, Univ. of Illinois at Urbana-Champaign (United States)
T. Cho, Univ. of Illinois at Urbana-Champaign (United States)
D. N. Ruzic, Univ. of Illinois at Urbana-Champaign (United States)
S. Srivastava, Cymer, Inc. (United States)
D. C. Brandt, Cymer, Inc. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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