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Proceedings Paper

Real-time scanning detection system of defects on a photomask by using the light scattering and interference method
Author(s): Sangon Lee; Byung heon Han; Jae Heung Jo; Hae Sung Wee; Jong Soo Kim
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Paper Abstract

In the process of lithography for semiconductor devices, the disuse of semiconductor devices is caused by the several hundred nanometer size pollutants generated by photochemical reactions, which is called by the haze. Therefore, the real time visual detection system is needed to inspect hazes before the existence of disuse semiconductor devices. We proposed and experimentally confirmed the concept of the real time scanning detection system for the defect on the photo-mask by interference fringes generated between the light wave scattered by small defect on the photo-mask and the reflected light wave from the rest area of the front surface.

Paper Details

Date Published: 3 April 2012
PDF: 11 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832430 (3 April 2012); doi: 10.1117/12.916430
Show Author Affiliations
Sangon Lee, Hannam Univ. (Korea, Republic of)
Byung heon Han, Hannam Univ. (Korea, Republic of)
Jae Heung Jo, Hannam Univ. (Korea, Republic of)
Hae Sung Wee, Nano Electro Opics Co., Ltd. (Korea, Republic of)
Jong Soo Kim, Nano Electro Opics Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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