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Proceedings Paper

Measurement of placement error between self-assembled polymer patterns and guiding chemical prepatterns
Author(s): Gregory S. Doerk; Chi-Chun Liu; Joy Y. Cheng; Charles T. Rettner; Jed W. Pitera; Leslie Krupp; Teya Topuria; Noel Arellano; Daniel P. Sanders
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Paper Abstract

Extensive pattern customization will be necessary to realize viable circuit patterns from line-space arrays generated by block copolymer directed self assembly (DSA). In pattern customization with regard to chemical epitaxy of lamellar block copolymers, quantitative and precise knowledge of DSA-feature registration to the chemical prepattern is critical. Here we measure DSA pattern placement error for spatial frequency tripling and quadrupling indexed to specific lines in the chemical prepattern. A range of prepattern line widths where minimal DSA placement error can be expected is identified, and a positive correlation between DSA placement accuracy and prepattern uniformity is shown. Considering the experimental non-idealities present in the chemical prepatterns used in this work that arise from using electron-beam lithography, we anticipate that 3σ DSA placement errors will be at a minimal level if highly uniform chemical prepatterns produced by optical lithography are used.

Paper Details

Date Published: 21 March 2012
PDF: 7 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230P (21 March 2012); doi: 10.1117/12.916421
Show Author Affiliations
Gregory S. Doerk, IBM Almaden Research Ctr. (United States)
Chi-Chun Liu, IBM Almaden Research Ctr. (United States)
Joy Y. Cheng, IBM Almaden Research Ctr. (United States)
Charles T. Rettner, IBM Almaden Research Ctr. (United States)
Jed W. Pitera, IBM Almaden Research Ctr. (United States)
Leslie Krupp, IBM Almaden Research Ctr. (United States)
Teya Topuria, IBM Almaden Research Ctr. (United States)
Noel Arellano, IBM Almaden Research Ctr. (United States)
Daniel P. Sanders, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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