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Proceedings Paper

Analysis of EUV mask multilayer defect printing characteristics
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Paper Abstract

Defects below and inside multilayers of EUV masks belong to the most critical concerns for the application of EUV lithography in manufacturing processes. These defects are difficult to inspect and to repair. Moreover, they may print at different focus positions. The paper employs fully rigorous electromagnetic field simulations to investigate the printing characteristics of such defects under various process conditions. Selected simulation results are compared to experimental data. Additional simulations demonstrate possible defect repair strategies.

Paper Details

Date Published: 22 March 2012
PDF: 12 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220E (22 March 2012); doi: 10.1117/12.916411
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Peter Evanschitzky, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Tristan Bret, Carl Zeiss SMS GmbH (Germany)
Rik Jonckheere, IMEC (Belgium)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

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