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Proceedings Paper

Toward faster and better litho control in high-volume manufacturing
Author(s): Chui-Fu Chiu; Chun-Yen Huang; Wen-Bin Wu; Chiang-Lin Shih; Healthy Huang; James Manka; DongSub Choi; Arthur Lin; David Tien
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Paper Abstract

As the cost of manufacturing high-end semiconductors continues to increase, the value of combining and streamlining metrology steps also increases. The two critical metrology steps for litho control are 1) overlay and 2) CD. In this study, the authors demonstrate the capability of just such a combination CD and Overlay metrology solution to improve not only the cost of manufacturing but also the quality of data and information feedback for better scanner control in high volume production. The authors demonstrate how using imaging and scatterometry technology on a single platform can provide a comprehensive litho control solution for both CD and overlay in the litho module. In the study, the authors will use full stack wafers from an advanced process node running in high volume manufacturing. Specifically, data will be generated using PROLITH for lithographic simulations for optimal target designs and then empirical data will be collected using the Archer 300 LCM from which optimal target selection and system performance will be determined and validated on wafers using this advanced process technology.

Paper Details

Date Published: 5 April 2012
PDF: 9 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832426 (5 April 2012); doi: 10.1117/12.916409
Show Author Affiliations
Chui-Fu Chiu, Nanya Technology Corp. (Taiwan)
Chun-Yen Huang, Nanya Technology Corp. (Taiwan)
Wen-Bin Wu, Nanya Technology Corp. (Taiwan)
Chiang-Lin Shih, Nanya Technology Corp. (Taiwan)
Healthy Huang, KLA-Tencor Corp. (United States)
James Manka, KLA-Tencor Corp. (United States)
DongSub Choi, KLA-Tencor Corp. (United States)
Arthur Lin, KLA-Tencor Corp. (United States)
David Tien, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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