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Proceedings Paper

Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process
Author(s): T. Chevolleau; G. Cunge; M. Delalande; X. Chevalier; R. Tiron; S. David; M. Darnon; C. Navarro
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Paper Abstract

The best strategy to transfer nanopatterns formed from the self assembly of PS/PMMA bloc copolymers into a silicon substrate is investigated. We show that a hard mask patterning strategy combined with a plasma cure treatment of the PS mask are necessary to reproduce the PS mask pattern into the silicon with a good critical dimension control. In addition, typical silicon etching plasma condition must be revisited to allow the etching of sub-20 nm holes. These results indicate that block copolymer can be readily used as etching masks for advanced CMOS technology.

Paper Details

Date Published: 17 March 2012
PDF: 6 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280M (17 March 2012); doi: 10.1117/12.916399
Show Author Affiliations
T. Chevolleau, Lab. des technologies de la Microeléctronique, CNRS (France)
CEA, LETI (France)
G. Cunge, Lab. des technologies de la Microeléctronique, CNRS (France)
CEA, LETI (France)
M. Delalande, Lab. des technologies de la Microeléctronique, CNRS (France)
CEA, LETI (France)
X. Chevalier, Arkema S.A. (France)
R. Tiron, CEA-LETI, MINATEC (France)
S. David, Lab. des technologies de la Microeléctronique, CNRS (France)
CEA, LETI (France)
M. Darnon, Lab. des technologies de la Microeléctronique, CNRS (France)
CEA, LETI (France)
C. Navarro, Arkema S.A. (France)


Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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