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Proceedings Paper

Mesoscale simulation of the line-edge structure during positive and negative tone resist development process
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Paper Abstract

Recent studies have shown that the semiconductor industry is seeking the possibility of utilizing both positive tone photoresist development (PTD) and negative tone photoresist development (NTD) to pursue ultimate pattern resolution. In particular, a minimal line edge roughness (LER) is one of the key performance indicators. Our current work is aimed at studying mechanisms of LER generation by simulating dynamics of polymer molecules in NTD using a meso-scale simulation technique called Dissipative Particle Dynamics (DPD). In DPD method, several neighboring monomers in a polymer chain are represented by one DPD particle with soft interaction potentials to accelerate calculation of polymer dynamics. In our previous studies, we performed virtual lithography experiments to study the molecular level polymer configuration, and investigated the polymer dissolution rate and the resulting LER generation. In the current work, in order to make this simulation method more practical for resist polymer design, we develop a method to tune the model parameters by calibrating to the experimental data obtained by development of actual resist polymers.

Paper Details

Date Published: 15 March 2012
PDF: 11 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250J (15 March 2012); doi: 10.1117/12.916389
Show Author Affiliations
Hiroshi Morita, National Institute of Advanced Industrial Science and Technology (Japan)
Ichiro Okabe, Intel Kabushiki Kaisha (Japan)
Saurabh Agarwal, Intel Corp. (United States)
Vivek K. Singh, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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