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Proceedings Paper

Latest cluster performance for EUV lithography
Author(s): H. Shite; K. Matsunaga; K. Nafus; H. Kosugi; P. Foubert; J. Hermans; E. Hendrickx; M. Goethals; D. Van Den Heuvel
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Paper Abstract

Previously, fundamental evaluations of the Extreme Ultra Violet (EUV) lithography process have been conducted using the CLEAN TRACK ACT™ 12 coater/developer with the ASML EUV Alpha Demo Tool (ADT) at imec. In that work, we confirmed the basic process sensitivities for the critical dimension (CD) and defectivity with EUV resists. Ultimate resolution improvements were examined with TBAH and FIRM™ Extreme. Moving forward with this work, the latest inline cluster is evaluated using the ASML NXE:3100 pre-production EUV scanner and the CLEAN TRACK™ LITHIUS Pro™ -EUV coater/developer. The imec standard EUV baseline process has been evaluated for manufacturability of CD uniformity control based on half pitch (HP) 27nm and ultimate resolution studies focusing on HP 22nm. With regards to the progress of the improvement for EUV processing, we confirmed the effectiveness of several novel concepts: FIRM™ Extreme10 showed increase in ultimate resolution and improvement in line width roughness (LWR) and process window; Tokyo Electron LTD. (TEL) smoothing process for roughness reduction showed 17% improvement for line and space (L/S) patterns; and finally the new dispense method reduced patterned wafer defectivity by over 50%.

Paper Details

Date Published: 23 March 2012
PDF: 9 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222Y (23 March 2012); doi: 10.1117/12.916388
Show Author Affiliations
H. Shite, Tokyo Electron Kyushu Ltd. (Japan)
K. Matsunaga, Tokyo Electron Kyushu Ltd. (Japan)
K. Nafus, Tokyo Electron Kyushu Ltd. (Japan)
H. Kosugi, Tokyo Electron Kyushu Ltd. (Japan)
P. Foubert, IMEC (Belgium)
J. Hermans, IMEC (Belgium)
E. Hendrickx, IMEC (Belgium)
M. Goethals, IMEC (Belgium)
D. Van Den Heuvel, IMEC (Belgium)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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