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Proceedings Paper

A new inorganic EUV resist with high-etch resistance
Author(s): Markos Trikeriotis; Marie Krysak; Yeon Sook Chung; Christine Ouyang; Brian Cardineau; Robert Brainard; Christopher K. Ober; Emmanuel P. Giannelis; Kyoungyong Cho
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Paper Abstract

Performance requirements for EUV resists will necessitate the development of entirely new resist platforms. As outlined in the ITRS, the new resists for EUVL must show high etch resistance (to enable pattern transfer using thinner films), improved LER and high sensitivity. A challenge in designing these new resists is the selection of molecular structures that will demonstrate superior characteristics in imaging and etch performance while maintaining minimal absorbance at EUV wavelengths. We have previously described the use of inorganic photoresists in 193 nm and e-beam lithography. These inorganic photoresists are made of HfO2 nanoparticles and have shown etch resistance that is 25 times higher than polymer resists. The high etch resistance of these materials allow the processing of very thin films (< 40 nm) and will push the resolution limits below 20 nm without pattern collapse. Additionally, the small size of the nanoparticles (< 5 nm) leads to low LER while the absorbance at EUV wavelengths is low. In this presentation we show that these inorganic resists can be applied to EUV lithography. We have successfully achieved high resolution patterning (<30 nm) with very high sensitivity and low LER.

Paper Details

Date Published: 22 March 2012
PDF: 6 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220U (22 March 2012); doi: 10.1117/12.916384
Show Author Affiliations
Markos Trikeriotis, Cornell Univ. (United States)
Marie Krysak, Cornell Univ. (United States)
Yeon Sook Chung, Cornell Univ. (United States)
Christine Ouyang, Cornell Univ. (United States)
Brian Cardineau, Univ. at Albany (United States)
Robert Brainard, Univ. at Albany (United States)
Christopher K. Ober, Cornell Univ. (United States)
Emmanuel P. Giannelis, Cornell Univ. (United States)
Kyoungyong Cho, SEMATECH North (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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