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Proceedings Paper

A 6.7-nm beyond EUV source as a future lithography source
Author(s): Takamitsu Otsuka; Bowen Li; Colm O'Gorman; Thomas Cummins; Deirdre Kilbane; Takeshi Higashiguchi; Noboru Yugami; Weihua Jiang; Akira Endo; Padraig Dunne; Gerard O'Sullivan
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Paper Abstract

We demonstrate an efficient extreme ultraviolet (EUV) source for operation at λ = 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2%BW), which is 1.6 times larger than the 0.33% (0.6%BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.

Paper Details

Date Published: 23 March 2012
PDF: 10 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832214 (23 March 2012); doi: 10.1117/12.916351
Show Author Affiliations
Takamitsu Otsuka, Utsunomiya Univ. (Japan)
Bowen Li, Univ. College Dublin (Ireland)
Colm O'Gorman, Univ. College Dublin (Ireland)
Thomas Cummins, Univ. College Dublin (Ireland)
Deirdre Kilbane, Univ. College Dublin (Ireland)
Takeshi Higashiguchi, Utsunomiya Univ. (Japan)
Noboru Yugami, Utsunomiya Univ. (Japan)
Weihua Jiang, Nagaoka Univ. of Technology (Japan)
Akira Endo, Waseda Univ. (Japan)
Padraig Dunne, Univ. College Dublin (Ireland)
Gerard O'Sullivan, Univ. College Dublin (Ireland)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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