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Proceedings Paper

Exploration of suitable dry etch technologies for directed self-assembly
Author(s): Fumiko Yamashita; Eiichi Nishimura; Koichi Yatsuda; Hiromasa Mochiki; Julie Bannister
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Paper Abstract

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Paper Details

Date Published: 17 March 2012
PDF: 9 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280T (17 March 2012); doi: 10.1117/12.916349
Show Author Affiliations
Fumiko Yamashita, Tokyo Electron Miyagi Ltd. (Japan)
Eiichi Nishimura, Tokyo Electron Miyagi Ltd. (Japan)
Koichi Yatsuda, Tokyo Electron Ltd. (Japan)
Hiromasa Mochiki, Tokyo Electron Ltd. (Japan)
Julie Bannister, Tokyo Electron America, Inc. (United States)


Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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