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Proceedings Paper

Resist outgassing characterization for qualification in high power EUV lithography
Author(s): Toshiya Takahashi; Norihiko Sugie; Kazuhiro Katayama; Isamu Takagi; Yukiko Kikuchi; Eishi Shiobara; Hiroyuki Tanaka; Soichi Inoue; Takeo Watanabe; Tetsuo Harada; Hiroo Kinoshita
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Paper Abstract

For high volume manufacturing (HVM) utilizing extreme ultraviolet (EUV) lithography, practical resist outgassing qualification system is required. Witness sample (WS) testing systems using electron beam (EB) or low power EUV light have been proposed as candidates, however some issues remain on how these alternative light sources, in comparison to high power EUV, will affect resist chemical reactions and ultimately resist outgassing. In this paper, we have investigated resist induced optics contamination by utilizing two types of WS test systems of high power EUV light and EB sources. A correlation between these light sources is discussed, especially focusing on the resulting chemical phenomena depending on resist material properties.

Paper Details

Date Published: 23 March 2012
PDF: 8 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221E (23 March 2012); doi: 10.1117/12.916347
Show Author Affiliations
Toshiya Takahashi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Norihiko Sugie, EUVL Infrastructure Development Ctr., Inc. (Japan)
Kazuhiro Katayama, EUVL Infrastructure Development Ctr., Inc. (Japan)
Isamu Takagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yukiko Kikuchi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Eishi Shiobara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hiroyuki Tanaka, EUVL Infrastructure Development Ctr., Inc. (Japan)
Soichi Inoue, EUVL Infrastructure Development Ctr., Inc. (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
Tetsuo Harada, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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