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Proceedings Paper

Advanced multi-patterning using resist core spacer process for 22nm node and beyond
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Paper Abstract

Self-aligned double patterning (SADP) such as multi-patterning process seems to be the most promising technology for 22nm node devices and beyond. In recent years, in order to further scaling, other multi-patterning processes such as self-aligned triple patterning (SATP) and self-aligned quadruple patterning (SAQP) have also been studied. However, process cost and CD controllability are major challenges since multi-patterning technology utilizes spacer processes which-requires a larger number of etching and deposition process steps. And then we began to study the simplified spacer process using resist core and we verified its process performance (Process window, LWR) This paper reports on the results of a comprehensive process evaluation of multi-patterning technology using lithography clusters, etching and deposition tools.

Paper Details

Date Published: 20 March 2012
PDF: 8 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832528 (20 March 2012); doi: 10.1117/12.916327
Show Author Affiliations
Yuhei Kuwahara, Tokyo Electron Kyushu Ltd. (Japan)
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Hideharu Kyouda, Tokyo Electron Kyushu Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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