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Proceedings Paper

High-etching selectivity of spin-on-carbon hard mask process for 22nm node and beyond
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Paper Abstract

As part of the trend toward finer semiconductor design rules, the resist film thickness is getting thinner, and the etching technology that uses resist masking is getting more difficult. To solve such a problem in recent years, the film structure used in the resist process also is changing from the single-layer process (BARC and resist stacked film) to the multi-layer process (Carbon hard-mask, middle layer and resist stacked film) The carbon hard-mask of multi-layer process can be divided into two kinds, which are the CVD-carbon (CVD-C) that uses the chemical vapor deposition method and Spin-on-carbon (SOC) that uses the spin-coating method. CVD-C is very attractive for ensuring the high etching selection ratio, but still has major challenges in particle reduction, lower planarization of substrate and high process cost. On the other hand, SOC is very attractive for low cost process, high level of planarization of substrate and no particles. Against this background, we verify the development of the SOC that had the high etch selection ratio by improving etching condition, material and SOC cure condition. Moreover, we can fabricate below 30nm SiO2 patterning and the possibility of development with extreme ultraviolet lithography (EUVL) was suggested. This paper reports on the results of a comprehensive process evaluation of a SOC based multi-layer technology using lithography clusters, etching tools.

Paper Details

Date Published: 20 March 2012
PDF: 6 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832525 (20 March 2012); doi: 10.1117/12.916326
Show Author Affiliations
Fumiko Iwao, Tokyo Electron Kyushu Ltd. (Japan)
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Hideharu Kyouda, Tokyo Electron Kyushu Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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