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Proceedings Paper

Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator
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Paper Abstract

The chemically amplified resist with a polymer-bound acid generator is a promising material for 16 nm node and beyond. However, its reaction mechanism is unknown. In this study, we propose a proton diffusion model for the chemically amplified resist with a polymer-bound acid generator. To examine the proton diffusion model, we carried out patterning experiments and simulation. The calculated latent images were compared with the measured line width and line edge roughness. The reaction mechanisms of the chemically amplified resist with a polymer-bound resist is discussed.

Paper Details

Date Published: 21 March 2012
PDF: 8 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832206 (21 March 2012); doi: 10.1117/12.916293
Show Author Affiliations
Takahiro Kozawa, Osaka Univ. (Japan)
Julius Joseph Santillan, EUVL Infrastructure Development Ctr., Inc. (Japan)
Toshiro Itani, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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