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Proceedings Paper

Insertion strategy for EUV lithography
Author(s): Obert Wood; John Arnold; Timothy Brunner; Martin Burkhardt; James H.-C. Chen; Deniz Civay; Susan S.-C. Fan; Emily Gallagher; Scott Halle; Ming He; Craig Higgins; Hirokazu Kato; Jongwook Kye; Chiew-Seng Koay; Guillaume Landie; Pak Leung; Gregory McIntyre; Satoshi Nagai; Karen Petrillo; Sudhar Raghunathan; Ralph Schlief; Lei Sun; Alfred Wagner; Tom Wallow; Yunpeng Yin; Xuelian Zhu; Matthew Colburn; Daniel Corliss; Cecilia Smolinski
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Paper Abstract

The first use of extreme ultraviolet (EUV) lithography in logic manufacturing is targeted for the 14 nm node, with possible earlier application to 20-nm node logic device back-end layers to demonstrate the technology. Use of EUV lithography to pattern the via-levels will allow the use of dark-field EUV masks with low pattern densities and will postpone the day when completely defect-free EUV mask blanks are needed. The quality of the imaging at the 14 nm node with EUV lithography is considerably higher than with double-dipole or double-exposure double-etch 193-nm immersion lithography, particularly for 2-dimensional patterns such as vias, because the Rayleigh k1-value when printing with 0.25 numerical aperture (NA) EUV lithography is so much higher than with 1.35 NA 193-nm immersion lithography and the process windows with EUV lithography are huge. In this paper, the status of EUV lithography technology as seen from an end-user perspective is summarized and the current values of the most important metrics for each of the critical elements of the technology are compared to the values needed for the insertion of EUVL into production at the 14 nm technology node.

Paper Details

Date Published: 13 March 2012
PDF: 8 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832203 (13 March 2012); doi: 10.1117/12.916292
Show Author Affiliations
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
John Arnold, IBM Corp. (United States)
Timothy Brunner, IBM Corp. (United States)
Martin Burkhardt, IBM Corp. (United States)
James H.-C. Chen, IBM Corp. (United States)
Deniz Civay, GLOBALFOUNDRIES Inc. (United States)
Susan S.-C. Fan, IBM Corp. (United States)
Emily Gallagher, IBM Microelectronics (United States)
Scott Halle, IBM Corp. (United States)
Ming He, IBM Corp. (United States)
Craig Higgins, GLOBALFOUNDRIES Inc. (United States)
Hirokazu Kato, Toshiba America Electronic Components, Inc. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Chiew-Seng Koay, IBM Corp. (United States)
Guillaume Landie, STMicroelectronics (United States)
Pak Leung, GLOBALFOUNDRIES Inc. (United States)
Gregory McIntyre, IBM Corp. (United States)
Satoshi Nagai, Toshiba America Electronic Components, Inc. (United States)
Karen Petrillo, IBM Corp. (United States)
Sudhar Raghunathan, GLOBALFOUNDRIES Inc. (United States)
Ralph Schlief, GLOBALFOUNDRIES Inc. (United States)
Lei Sun, GLOBALFOUNDRIES Inc. (United States)
Alfred Wagner, IBM Corp. (United States)
Tom Wallow, GLOBALFOUNDRIES Inc. (United States)
Yunpeng Yin, IBM Corp. (United States)
Xuelian Zhu, GLOBALFOUNDRIES Inc. (United States)
Matthew Colburn, IBM Corp. (United States)
Daniel Corliss, IBM Corp. (United States)
Cecilia Smolinski, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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