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Proceedings Paper

EUV mask line edge roughness
Author(s): Amy E. Zweber; Emily Gallagher; Martha Sanchez; Tasuku Senna; Yoshiyuki Negishi; Toshio Konishi; Anne McGuire; Luisa Bozano; Phil Brock; Hoa Truong
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Paper Abstract

Extreme ultraviolet (EUV) mask fabrication faces many unique challenges, including more stringent line edge roughness (LER) requirements. EUV mask absorber LER will need to be reduced to reliably meet the 2013 International Roadmap for Semiconductors line width roughness target of 3.3 nm. This paper will focus on evaluating resists modified and deployed specifically to reduce LER on EUV masks. Masks will be built, and the final mask absorber LER reported considering multiple imaging and analysis techniques. An assessment of best methods for mask LER analysis will be provided and used to judge resist performance.

Paper Details

Date Published: 22 March 2012
PDF: 10 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220O (22 March 2012); doi: 10.1117/12.916291
Show Author Affiliations
Amy E. Zweber, IBM Corp. (United States)
Emily Gallagher, IBM Corp. (United States)
Martha Sanchez, IBM Almaden Research Ctr. (United States)
Tasuku Senna, Toppan Photomasks, Inc. (United States)
Yoshiyuki Negishi, Toppan Photomasks, Inc. (United States)
Toshio Konishi, Toppan Photomasks, Inc. (United States)
Anne McGuire, IBM Corp. (United States)
Luisa Bozano, IBM Almaden Research Ctr. (United States)
Phil Brock, IBM Almaden Research Ctr. (United States)
Hoa Truong, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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