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Proceedings Paper

Pattern transfer from the e-beam resist, over the nanoimprint resist and to the final silicon substrate
Author(s): Jian He; S. Howitz; K. Richter; J. W. Bartha; J. I. Moench
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Paper Abstract

We developed Fluor-based RIE processes to fabricate nanoimprint template in silicon and to transfer patterns from the imprint resist to the silicon substrate. The etched silicon patterns have slightly tapered and smooth sidewalls. The sidewall angle can be controlled between 85° and 90° by varying the ratio of the used gas. The dimension of the etched structures is identical with the patterns in the resist. We demonstrated line structures in silicon substrate down to 50 nm. The etching rate is over 100 nm per minute and the maximal achieved aspect ratio is more than 10.

Paper Details

Date Published: 16 March 2012
PDF: 8 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280S (16 March 2012); doi: 10.1117/12.916285
Show Author Affiliations
Jian He, GeSiM Gesellschaft fuer Silizium-Mikrosysteme mbH (Germany)
Technical Univ. Dresden (Germany)
S. Howitz, GeSiM Gesellschaft fuer Silizium-Mikrosysteme mbH (Germany)
K. Richter, Technische Univ. Dresden (Germany)
J. W. Bartha, Technische Univ. Dresden (Germany)
J. I. Moench, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden (Germany)


Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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