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Proceedings Paper

Functional resist materials for negative tone development in advanced lithography
Author(s): Shinji Tarutani; Kana Fujii; Kei Yamamoto; Kaoru Iwato; Michihiro Shirakawa
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Paper Abstract

Challenges of lithography performance, dry etch resistance, and substrate dependency in resist materials dedicated to negative tone development (NTD) process were studied. The gamma-parameter in contrast curve was increased to achieve improvement in lithography performances, and CD-uniformity (CDU), DOF, and circularity of dense C/H pattern were studied for the resist material. Ohnishi-parameter of de-protected polymer was decreased to improve dry etch resistance, and dissolution property and lithography performance were studied to look at maturity of materials. Formulation dependency on pattern collapse property on spin-on-type Si-hard mask (Si-HM) were studied, and material property to suppress pattern collapse was discussed.

Paper Details

Date Published: 8 March 2012
PDF: 8 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832505 (8 March 2012); doi: 10.1117/12.916281
Show Author Affiliations
Shinji Tarutani, FUJIFILM Corp. (Japan)
Kana Fujii, FUJIFILM Corp. (Japan)
Kei Yamamoto, FUJIFILM Corp. (Japan)
Kaoru Iwato, FUJIFILM Corp. (Japan)
Michihiro Shirakawa, FUJIFILM Corp. (Japan)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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