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Proceedings Paper

Doubling the spatial frequency with cavity resonance lithography
Author(s): Hyesog Lee; Ravi Verma
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Paper Abstract

We describe the theory and report the first experimental demonstration of Cavity Resonance Lithography (CRL); a double pattering (DP) technique that can generate patterns 1) with twice the spatial frequency of that of the diffraction limited lithography mask, and 2) at an offset distance that is in the farfield of the mask. CRL requires only a single exposure and development step and does not require any additional processes. With commercially available photoresists (PR) and developers, we have recorded a 32.5 nm half-pitch pattern (which is well below the diffraction limit) at an offset distance of 180 nm (which is well beyond the evanescent decay length scales) using 193 nm illumination. We also discuss strategies to improve the minimum feature size and potential implementation schemes.

Paper Details

Date Published: 13 March 2012
PDF: 7 pages
Proc. SPIE 8326, Optical Microlithography XXV, 832610 (13 March 2012); doi: 10.1117/12.916222
Show Author Affiliations
Hyesog Lee, Tanner Research, Inc. (United States)
Ravi Verma, Tanner Research, Inc. (United States)

Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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