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Proceedings Paper

Simultaneous calibration of acid diffusion and developer loading parameters for computational lithography
Author(s): Ashesh Parikh
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Paper Abstract

Resist parameters for computational lithography model were extracted from a set of gratings. The gratings comprised of lines and spaces where the main feature proximity was modulated by placement of sub and near resolution assist features. Modulating the size of the assist features resulted in simultaneous variation of the amount of photo-acid and developer loading. The straight Gaussian kernel was modified to represent the effect of base quencher to the photo-acid. An additional density based kernel was created to represent the effect of developer loading. These kernels allowed for significant improvement in fitting error. The models were validated against an independent data-set comprised of asymmetric features.

Paper Details

Date Published: 14 March 2012
PDF: 11 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250L (14 March 2012); doi: 10.1117/12.916200
Show Author Affiliations
Ashesh Parikh, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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