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Proceedings Paper

Defining and measuring development rates for a stochastic resist
Author(s): Chris A. Mack
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Paper Abstract

Development rate can be defined microscopically (the development rate at a point) or macroscopically (the propagation rate of an average resist height). In the presence of stochastic noise, these two rates will be different. Using a stochastic resist simulator, the propagation rate of a resist surface is calculated in the presence of stochastic variation in the resist deprotection concentration using a nonlinear development rate model. For both 2D and 3D simulations, the development front propagation rate was fit to semi-empirical expressions. The resulting propagation rate can be more than an order of magnitude higher than for the case of no stochastic noise. The differences between microscopic and macroscopic dissolution rate can have an important effect on how development rate models should be calibrated, depending on their use in continuum or stochastic lithography simulators.

Paper Details

Date Published: 20 March 2012
PDF: 8 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83251K (20 March 2012); doi: 10.1117/12.916195
Show Author Affiliations
Chris A. Mack, (United States)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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