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Proceedings Paper

Phase defect mitigation strategy: fiducial mark requirements on extreme ultraviolet lithography mask
Author(s): Tetsunori Murachi; Tsuyoshi Amano; Sung Hyun Oh
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Paper Abstract

For Extreme Ultra-Violet Lithography (EUVL), fabrication of defect free multi-layered (ML) mask blanks is one of the difficult challenges. ML defects come from substrate defects and adders during ML coating, cannot be removed, and are called as phase defect. If we can accept ML blanks with certain number of phase defects, the blank yield will be drastically up. In order to use such blanks, the phase defects need to be identified and located during ML blank defect inspection before absorber patterning. To locate phase defects on the blanks accurately and precisely, Fiducial Marks (FM) on ML blanks are needed for mask alignment and defect location information. The proposed requirement of defect location accuracy is ≤20 nm [1]. In this paper, we will present the result of feasibility study on the requirements of FM on EUVL mask by simulations & experiments to establish the phase defect mitigation method with EUV Actinic Blank Inspection (ABI) tool. And the optimum ranges of FM line width, depth, and fabrication method on EUVL mask based on above results are ≥ 5 um line width, ≥ 100 nm depth FM etched into ML respectively, and additional finer FMs for magnified optics.

Paper Details

Date Published: 23 March 2012
PDF: 11 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221Q (23 March 2012); doi: 10.1117/12.916141
Show Author Affiliations
Tetsunori Murachi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Sung Hyun Oh, EUVL Infrastructure Development Ctr., Inc. (Japan)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

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