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Proceedings Paper

Fully integrated litho aware PnR design solution
Author(s): Charlotte Beylier; Clement Moyroud; Fabrice Bernard Granger; Frederic Robert; Emek Yesilada; Yorick Trouiller; Jean-Claude Marin
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Paper Abstract

Design For Manufacturing (DFM) is becoming essential to ensure good yield for deep sub micron technologies. As design rules cannot anticipate all manufacturing marginalities resulting from problematic 2D patterns, the latter has to be addressed at design level through DFM tools. To deploy DFM strategy on back end levels, STMicroelectronics has implemented a CAD solution for lithographic hotspots search and repair. This allows the detection and the correction, at the routing step, of hotspots derived from lithographic simulation after OPC treatment. The detection of hotspots is based on pattern matching and the repair uses local reroute ability already implemented in Place and Route (PnR) tools. This solution is packaged in a Fast LFD Kit for 28 nm technology and fully integrated in PnR platforms. It offers a solution for multi suppliers CAD vendors routed designs. To ensure a litho friendly repair, the flow integrates a step of local simulation of the rerouted zones. This paper explains the hotspots identification, their detection through pattern matching and repair in the PnR platform. Run time, efficiency rate, timing and RC parasitic impacts are also analyzed.

Paper Details

Date Published: 14 March 2012
PDF: 9 pages
Proc. SPIE 8327, Design for Manufacturability through Design-Process Integration VI, 83270A (14 March 2012); doi: 10.1117/12.916138
Show Author Affiliations
Charlotte Beylier, STMicroelectronics (France)
Clement Moyroud, Mentor Graphics Corp. (France)
Fabrice Bernard Granger, STMicroelectronics (France)
Frederic Robert, STMicroelectronics (France)
Emek Yesilada, STMicroelectronics (France)
Yorick Trouiller, STMicroelectronics (France)
Jean-Claude Marin, STMicroelectronics (France)

Published in SPIE Proceedings Vol. 8327:
Design for Manufacturability through Design-Process Integration VI
Mark E. Mason, Editor(s)

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