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Proceedings Paper

In-situ critical dimension control during post-exposure bake with spectroscopic ellipsometry
Author(s): Yit Sung Ngo; Yifan Qu; Arthur Tay; Tong Heng Lee
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Paper Abstract

Strong correlation between de-protection induced thickness reduction and amplified chemical reaction in the exposed area of the chemically amplified resist (CAR) during post-exposure bake (PEB) has been established. The optical properties of the resist film due to the thickness reduction can be detected using a spectroscopic ellipsometer. In this paper, a rotating polarizer spectroscopic ellipsometer is developed and a proposed control scheme is presented for signature profiles matching. With the implementation of the control scheme, wafer-towafer critical dimensions (CD) uniformity is improved by 5 times.

Paper Details

Date Published: 3 April 2012
PDF: 11 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242N (3 April 2012); doi: 10.1117/12.916133
Show Author Affiliations
Yit Sung Ngo, National Univ. of Singapore (Singapore)
Yifan Qu, National Univ. of Singapore (Singapore)
Arthur Tay, National Univ. of Singapore (Singapore)
Tong Heng Lee, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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