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Proceedings Paper

Direct implant through BARC
Author(s): Tomoya Ohashi; Makiko Umezaki; Yoshiomi Hiroi; Shigeo Kimura; Yuki Usui; Takahiro Kishioka
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Paper Abstract

The lithography process for implant layer will be more difficult beyond 22nm node. Current method, TARC/ resist stacks, resist/ DBARC stacks and resist/ BARC with etching process, can't meet manufacture requirement. How to solve this issue will be very important topic. In this study, we evaluated resist/ BARC stacks without etching. We call this process "direct implant through BARC process". We focused on depth profile of implant ion in substrate after direct implant through BARC process. We evaluated dependency between ion depth profile and BARC property. As a result, we found out BARC thickness had a big impact on ion depth profile and component of BARC was injected into substrate. We discussed modification of substrate using component of BARC.

Paper Details

Date Published: 19 March 2012
PDF: 8 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832519 (19 March 2012); doi: 10.1117/12.916132
Show Author Affiliations
Tomoya Ohashi, Nissan Chemical Industries, Ltd. (Japan)
Makiko Umezaki, Nissan Chemical Industries, Ltd. (Japan)
Yoshiomi Hiroi, Nissan Chemical Industries, Ltd. (Japan)
Shigeo Kimura, Nissan Chemical Industries, Ltd. (Japan)
Yuki Usui, Nissan Chemical Industries, Ltd. (Japan)
Takahiro Kishioka, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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