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Proceedings Paper

Spin-on-carbon-hardmask with high wiggling resistance
Author(s): Yasunobu Someya; Tetsuya Shinjo; Keisuke Hashimoto; Hirokazu Nishimaki; Ryo Karasawa; Rikimaru Sakamoto; Takashi Matsumoto
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Paper Abstract

For the mass production of the advanced semiconductor device, the multi-layer process has been used for the essential technique {photoresist/ silicon contained hard mask (Si-HM)/ spin-on-carbon-hardmask (SOC)}. Spin -on-Carbon material plays a very important role during the etching process of substrates. The substrate etching process induces severe pattern deformations (called wiggling) especially with fine line/space patterns. Therefore, both the high etching resistances and the high wiggling resistance are demanded for SOC materials. In this study, we investigated the etching performances with several SOC materials. We found that the relationships between SOC properties and the resistance for wiggling generation. We will discuss the material design of novel SOC for high wiggling resistance.

Paper Details

Date Published: 19 March 2012
PDF: 6 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250U (19 March 2012); doi: 10.1117/12.916128
Show Author Affiliations
Yasunobu Someya, Nissan Chemical Industries, Ltd. (Japan)
Tetsuya Shinjo, Nissan Chemical Industries, Ltd. (Japan)
Keisuke Hashimoto, Nissan Chemical Industries, Ltd. (Japan)
Hirokazu Nishimaki, Nissan Chemical Industries, Ltd. (Japan)
Ryo Karasawa, Nissan Chemical Industries, Ltd. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)
Takashi Matsumoto, Nissan Chemical Industries, Ltd. (Japan)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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