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Proceedings Paper

Multiple columns for high-throughput complementary e-beam lithography (CEBL)
Author(s): Enden D. Liu; Cong Tran; Ted Prescop; David K. Lam
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Paper Abstract

Developers of e-beam lithography systems are pursuing diverse strategies to bolster throughput. To achieve parallelism, some e-beam efforts focus on building multiple-columns, and others focus on developing columns with multiple beamlets. In this paper, we discuss the benefits and throughput of a multiple column approach for a particular application: Complementary E-Beam Lithography (CEBL). CEBL is a novel approach where the e-beam lithography system is used only to pattern the smallest features. Everything else is patterned with existing optical lithography equipment. By working hand-in-hand with optical lithography, CEBL provides an urgently needed solution to create next-generation microchips. Moreover, CEBL is extendable for multiple technology generations. We show how a multiple column approach is the best way to meet the requirements for CEBL, including high throughput, high resolution and overlay accuracy, without excess complexity or cost.

Paper Details

Date Published: 21 March 2012
PDF: 10 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83231Y (21 March 2012); doi: 10.1117/12.916118
Show Author Affiliations
Enden D. Liu, Multibeam Corp. (United States)
Cong Tran, Multibeam Corp. (United States)
Ted Prescop, Multibeam Corp. (United States)
David K. Lam, Multibeam Corp. (United States)


Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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