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Proceedings Paper

Reflective electron-beam lithography: progress toward high-throughput production capability
Author(s): Regina Freed; Thomas Gubiotti; Jeff Sun; Francoise Kidwingira; Jason Yang; Upendra Ummethala; Layton C. Hale; John J. Hench; Shinichi Kojima; Walter D. Mieher; Chris F. Bevis; Shy-Jay Lin; Wen-Chuan Wang
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Paper Abstract

Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 16 nm technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) targeting high-volume 16 nm half pitch (HP) production. This paper reviews progress in the development of the REBL system towards its goal of 100 wph throughput for High Volume Manufacturing (HVM) at the 2X and 1X nm nodes. We will demonstrate the ability to print TSMC test patterns with the integrated system in photoresist on silicon wafers at 45 nm resolution. Additionally, we present simulation and experimental results that demonstrate that the system meets performance targets for a typical foundry product mix. Previously, KLA-Tencor reported on the development of a REBL tool for maskless lithography at and below the 16 nm HP technology node1. Since that time, the REBL team and its partners (TSMC, IMEC) have made good progress towards developing the REBL system and Digital Pattern Generator (DPG) for direct write lithography. Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the continued uncertainty with regards to the optical lithography roadmap beyond the 16 nm HP technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for HVM.

Paper Details

Date Published: 21 March 2012
PDF: 10 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230H (21 March 2012); doi: 10.1117/12.916090
Show Author Affiliations
Regina Freed, KLA-Tencor Corp. (United States)
Thomas Gubiotti, KLA-Tencor Corp. (United States)
Jeff Sun, KLA-Tencor Corp. (United States)
Francoise Kidwingira, KLA-Tencor Corp. (United States)
Jason Yang, KLA-Tencor Corp. (United States)
Upendra Ummethala, KLA-Tencor Corp. (United States)
Layton C. Hale, KLA-Tencor Corp. (United States)
John J. Hench, KLA-Tencor Corp. (United States)
Shinichi Kojima, KLA-Tencor Corp. (United States)
Walter D. Mieher, KLA-Tencor Corp. (United States)
Chris F. Bevis, KLA-Tencor Corp. (United States)
Shy-Jay Lin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Wen-Chuan Wang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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