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Proceedings Paper

Mg-hydrogen interaction in AlGaN alloys
Author(s): M. E. Zvanut; Ustun R. Sunay; J. Dashdorj; W. R. Willoughby; A. A. Allerman
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Paper Abstract

It is well known that hydrogen passivation of Mg in Mg-doped GaN reduces free hole concentrations. While there are numerous studies of passivation of Mg in GaN, little work has been reported concerning passivation rates in AlGaN alloys. We investigated the hydrogen interaction with Mg in nitrides by measuring the intensity of the electron paramagnetic resonance (EPR) signal associated with the acceptor. The samples were isothermally annealed in sequential steps ranging from 5 min - 6.6 h between 300 and 700 oC in H2:N2 (7%: 92%) or pure N2. The signal intensity decreased during the H2N2 anneal and was revived by the N2 anneal as expected; however, the rate at which the intensity changed was shown to depend on Al concentration. In addition, while all signals were quenched at 700 oC in H2:N2, a 750 oC N2 anneal reactivated only about 30% of the Mg in the alloys and 80% of the intensity in the GaN film. These data suggest that the rate of passivation and activation of Mg by hydrogen is dependent on the concentration of Al in the AlxGa-1xN layer. The EPR annealing data could prove to be beneficial in improving p-type optimization in AlGaN alloys.

Paper Details

Date Published: 27 February 2012
PDF: 6 pages
Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620L (27 February 2012); doi: 10.1117/12.916073
Show Author Affiliations
M. E. Zvanut, The Univ. of Alabama at Birmingham (United States)
Ustun R. Sunay, The Univ. of Alabama at Birmingham (United States)
J. Dashdorj, The Univ. of Alabama at Birmingham (United States)
W. R. Willoughby, The Univ. of Alabama at Birmingham (United States)
A. A. Allerman, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 8262:
Gallium Nitride Materials and Devices VII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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