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Proceedings Paper

Printability study of pattern defects in the EUV mask as a function of hp nodes
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Paper Abstract

Amplitude defects (or absorber defects), which are located in absorber patterns or multilayer surface, can be repaired during mask process while phase defects (or multilayer defects) cannot. Hence, inspection and handling of both defects should be separately progressed. Defect printability study of pattern defects is very essential since it provides criteria for mask inspection and repair. Printed defects on the wafer kill cells and reduce the device yield in wafer processing, and thus all the printable defects have to be inspected and repaired during the mask fabrication. In this study, pattern defect printability of the EUV mask as a function of hp nodes is verified by EUV exposure experiments. For 3x nm hp nodes, defect printability is evaluated by NXE3100. For 2x nm hp node, since resolution of a current EUV scanner is not enough, SEMATECH-Berkeley actinic inspection tool (AIT) as well as micro-field exposure tool (MET) in LBNL are utilized to verify it,. Furthermore those printability results are compared with EUV simulations. As a result, we define size of defects to be controlled in each device node.

Paper Details

Date Published: 22 March 2012
PDF: 7 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220A (22 March 2012); doi: 10.1117/12.916052
Show Author Affiliations
Tae-Geun Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Hwan-Seok Seo, Samsung Electronics Co., Ltd. (Korea, Republic of)
In-Yong Kang, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chang Young Jeong, Samsung Electronics Co., Ltd. (Korea, Republic of)
Sungmin Huh, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jihoon Na, Samsung Electronics Co., Ltd. (Korea, Republic of)
Seong-Sue Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, Samsung Electronics Co., Ltd. (Korea, Republic of)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

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