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Proceedings Paper

Study of the lithography characteristics of novolak resist at different PAC concentrations
Author(s): Atsushi Sekiguchi; Akichika Nakao; Hideo Horibe; Hatsuyuki Tanaka
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Paper Abstract

In a recent study, we measured the exposure and development characteristics of five types of novolak resists with varying photoactive compound (PAC) concentrations. This report presents measurement results, as well as results of comparisons of patterns and process margins, obtained using the PROLITH lithography simulator. We also used PROLITH to investigate the effects of PAC concentrations on the swing ratio. Both experiment and simulation confirm that increasing PAC loading results in improved exposure latitude and reduced feature size swing ratio.

Paper Details

Date Published: 19 March 2012
PDF: 13 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83251O (19 March 2012); doi: 10.1117/12.916037
Show Author Affiliations
Atsushi Sekiguchi, Litho Tech Japan Co., Ltd. (Japan)
Akichika Nakao, Kanazawa Institute of Technology (Japan)
Hideo Horibe, Kanazawa Institute of Technology (Japan)
Hatsuyuki Tanaka, AZ Electronic Materials K.K. (Japan)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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