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Proceedings Paper

Removal of SU-8 resists using hydrogen radicals generated by tungsten hot-wire catalyzer
Author(s): Akihiko Kono; Yu Arai; Yousuke Goto; Hideo Horibe
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Paper Abstract

We investigated removal of chemically amplified negative-tone i-line resist SU-8 using hydrogen radicals, which was generated by the catalytic decomposition of H2/N2 mixed gas (H2:N2 = 10:90vol.%) using tungsten hot-wire catalyzer. SU-8 with exposure dose from 7 (Dg100×0.5) to 280mJ/cm2 (Dg100×20) were removed by hydrogen radicals without a residual layer. When the distance between the catalyzer and the substrate was 100mm, the catalyzer temperature was 2400°C, and the initial substrate temperature was 50°C, removal rate of SU-8 was 0.17μm/min independent of exposure dose to the SU-8. Finally, we obtained high removal rate for SU-8 (exposure dose = 14mJ/cm2 (Dg100)) of approximately 4μm/min when the distance between the catalyzer and the substrate was 20mm, the catalyzer temperature was 2400°C, and the initial substrate temperature was 165°C.

Paper Details

Date Published: 16 March 2012
PDF: 10 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280R (16 March 2012); doi: 10.1117/12.916033
Show Author Affiliations
Akihiko Kono, Kanazawa Institute of Technology (Japan)
Yu Arai, Kanazawa Institute of Technology (Japan)
Yousuke Goto, Kanazawa Institute of Technology (Japan)
Hideo Horibe, Kanazawa Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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