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Proceedings Paper

The role resist plays in EUVL extensibility
Author(s): Shinn-Sheng Yu; Anthony Yen; Chih-T'sung Shih; Yen-Cheng Lu; Shu-Hao Chang; Jui-Ching Wu; Jimmy Hu; Timothy Wu
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Paper Abstract

In this paper, the impact of resist on the lithographic process window is investigated. To estimate the resolution limit of EUVL due to the limitation from resist performance, a simplified resist model, called diffused aerial image model (DAIM), is employed. In the DAIM, the resist is characterized by the acid diffusion length, or more generally, resist blur. Lithographic process windows with resists of various blurs are then calculated for different technology nodes. It is concluded that the resist blur needs to be smaller than 8 nm to achieve a reasonable window for the technology node with the minimum pitch of 32 nm. The performance of current resists can barely fulfill this requirement. Investigation of a more refined resist model is also initiated.

Paper Details

Date Published: 23 March 2012
PDF: 7 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222A (23 March 2012); doi: 10.1117/12.916024
Show Author Affiliations
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chih-T'sung Shih, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Yen-Cheng Lu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Shu-Hao Chang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Jui-Ching Wu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Jimmy Hu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Timothy Wu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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