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Proceedings Paper

Printability and inspectability of defects on EUV blank for 2xnm hp HVM application
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Paper Abstract

The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. Recently both blank suppliers achieved 1-digit number of defects at 60nm in size using their M1350s. In this paper, a full field EUV mask with Teron 61X blank inspection is fabricated to see the printability of various defects on the blank using NXE 3100. Minimum printable blank defect size is 23nm in SEVD using real blank defect. Current defect level on blank with Teron 61X Phasur has been up to 70 in 132 X 132mm2. More defect reduction as well as advanced blank inspection tools to capture all printable defects should be prepared for HVM. 3.6X reduction of blank defects per year is required to achieve the requirement of HVM in the application of memory device with EUVL. Furthermore, blank defect mitigation and compensational repair techniques during mask process needs to be developed to achieve printable defect free on the wafer.

Paper Details

Date Published: 23 March 2012
PDF: 7 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220K (23 March 2012); doi: 10.1117/12.916021
Show Author Affiliations
Sungmin Huh, Samsung Electronics Co., Ltd. (Korea, Republic of)
In-Yong Kang, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chang Young Jeong, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jihoon Na, Samsung Electronics Co., Ltd. (Korea, Republic of)
Dong Ryul Lee, Samsung Electronics Co., Ltd. (Korea, Republic of)
Hwan-seok Seo, Samsung Electronics Co., Ltd. (Korea, Republic of)
Seong-Sue Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jonggul Doh, Samsung Electronics Co., Ltd. (Korea, Republic of)
Hanyang Univ. (Korea, Republic of)
Gregg Inderhees, KLA-Tencor Corp. (United States)
Jinho Ahn, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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