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Proceedings Paper

THz lasing in InAs/GaSb broken-gap heterostructure devices and quantum-dot pillar arrays
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Paper Abstract

A novel approach for the generation of THz radiation that utilizes "interband" transitions and tunneling processes occurring simultaneously within double-barrier (DB) GaSb/InAs/GaSb broken-gap (BG) resonant-tunneling-diodes (RTDs) is discussed. This paper focuses on the architectural and cavity designs for realizing TE polarized emission from single DB-BG-RTD devices and quantum-dot pillar arrays. Design techniques useful for mitigating CB drive current (& the associated thermal heating) while at the same time optimizing output power and power efficiency are discussed.

Paper Details

Date Published: 28 February 2012
PDF: 8 pages
Proc. SPIE 8261, Terahertz Technology and Applications V, 82610B (28 February 2012); doi: 10.1117/12.915985
Show Author Affiliations
Dwight Woolard, U.S. Army Research Office (United States)
North Carolina State Univ. (United States)
Weidong Zhang, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 8261:
Terahertz Technology and Applications V
Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)

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