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Proceedings Paper

Optical performance comparison between negative tone development and positive tone development
Author(s): Seung-Hune Yang; Eun Sung Kim; Seongho Moon; Sooryong Lee; Seong-Woon Choi; Jungdal Choi
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Paper Abstract

A negative tone development (NTD) process has been considered as apromising candidate for the smaller contact solution due to the remarkable image quality over a positive tone develop (PTD) process. However, it has not been investigated why NTD has higher optical performance than PTD yet. In this paper, image log slope (ILS) and mask error enhancement factor (MEEF) of binary and phase shift masks (PSM) are investigated with considering mask bias, target critical dimension (CD) and pattern pitch. It is found that the irradiance slope is steep and wafer CD variation from mask CD variation is small when the target CD is relatively smaller than pattern pitch. Mathematical model is derived to analyze image quality of binary mask and PSM.Three-dimensional mask effect is also considered with rigorous simulation.

Paper Details

Date Published: 3 April 2012
PDF: 14 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832504 (3 April 2012); doi: 10.1117/12.915931
Show Author Affiliations
Seung-Hune Yang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Eun Sung Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seongho Moon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sooryong Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-Woon Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jungdal Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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