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Proceedings Paper

Implant confined 1850nm VCSELs
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Paper Abstract

Vixar has recently developed VCSELs at 1850nm, a wavelength of interest for neural stimulation applications. This paper discusses the design and fabrication of these new long-wavelength lasers, and reports on the most recent performance results. The VCSELs are based on InP-compatible materials and incorporate highly strained InGaAs quantum wells to achieve 1850nm emission. Current confinement in the VCSEL is achieved by ion implantation, resulting in a planar fabrication process with a single epitaxial growth step. Continuous wave lasing is demonstrated for aperture sizes varying from 8 to 50μm with threshold currents of 1-17mA. The devices demonstrate peak power of 7mW at room temperature and CW operation up to 85°C.

Paper Details

Date Published: 7 February 2012
PDF: 6 pages
Proc. SPIE 8276, Vertical-Cavity Surface-Emitting Lasers XVI, 82760Y (7 February 2012); doi: 10.1117/12.915888
Show Author Affiliations
Matthew M. Dummer, Vixar (United States)
Klein Johnson, Vixar (United States)
Mary Hibbs-Brenner, Vixar (United States)
William K. Hogan, Vixar (United States)


Published in SPIE Proceedings Vol. 8276:
Vertical-Cavity Surface-Emitting Lasers XVI
Chun Lei; Kent D. Choquette, Editor(s)

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