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Proceedings Paper

Developable BARC for special applications
Author(s): Felix Braun; Jens Schneider; Marcus Dankelmann; Marcel Heller; Daniel Sarlette
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Paper Abstract

Developable Bottom Anti-Reflective Coating (DBARC) technology becomes more and more attractive for lithographical processes and has proven over the last two years the high volume manufacturing capability. As main application of DBARC the implant lithography has long been considered as the ideal insertion point. Taking the advantage of eliminating the cost intensive BARC open etch step and an improved reflectivity control compared to conventional top anti-reflective materials (TARCs). But also non-implant levels can benefit by exchanging conventional BARC technology to a DBARC system with the ability to simplify lithographic and integration process efforts. We will describe our work and the results of introducing the DBARC material compared to our standard processes. Besides the usage for implant applications, we especially focused on the influence of DBARC material on topography issues, e.g. topography due to STI leveling, which generates a lot of problems with respect to CD uniformity and profile integrity. Therefore the BARC material was not only used for standard 248nm or 193nm processes, but was also implemented in our i-line process. Besides the decoupling from highly reflective, rough substrates, DBARC is expected to provide significant resist budget for critical etch processes compared to standard BARC approaches. This was also investigated on an i-line metal layer and on DUV metal/nitride stack. The benefit of DBARC materials for reflectivity control can be enlarged by improving the resist adhesion on challenging underlaying substrates and by suspending the negative influences of topography issues for integration schemes which do not allow the usage of standard BARC or TARC processes.

Paper Details

Date Published:
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83252C; doi: 10.1117/12.915831
Show Author Affiliations
Felix Braun, Infineon Technologies Dresden (Germany)
Jens Schneider, Infineon Technologies Dresden (Germany)
Marcus Dankelmann, Infineon Technologies Dresden (Germany)
Marcel Heller, Infineon Technologies Dresden (Germany)
Daniel Sarlette, Infineon Technologies Dresden (Germany)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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